High-Performance Surface Acoustic Wave Devices Using LiNbO3/SiO2/SiC Multilayered Substrates

• Published in: IEEE transactions on microwave theory and techniques Vol. 69; no. 8; pp. 3693 - 3705
• Main Authors: Shen, Junyao, Fu, Sulei, Su, Rongxuan, Xu, Huiping, Lu, Zengtian, Xu, Zhibin, Luo, Jingting, Zeng, Fei, Song, Cheng, Wang, Weibiao, Pan, Feng
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 5G mobile communication; Bandwidth; Coupling coefficients; Electrical impedance; Electromagnetic wave filters; Finite element method; Frequency filters; Insertion loss; Large bandwidth; LiNbO; Lithium niobates; multilayered substrate; Performance evaluation; power durability; Resonators; SiC; Silicon carbide; Silicon dioxide; Single crystals; Substrates; surface acoustic wave (SAW); Surface acoustic wave devices; Surface acoustic waves; temperature stability

The rapid development of the fifth-generation (5G) wireless system is driving strong demand for high-performance radio frequency filters. This work studies shear horizontal surface acoustic wave (SAW) devices using 15°-rotated <inline-formula> <tex-math notation="LaTeX">Y </...