Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment

• Published in: 2021 IEEE Aerospace Conference (50100) pp. 1 - 12
• Main Authors: Eisner, Savannah R., Alpert, Hannah S., Chapin, Caitlin A., Yalamarthy, Ananth Saran, Satterthwaite, Peter F., Nasiri, Ardalan, Port, Sara, Ang, Simon, Senesky, Debbie G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 06.03.2021
• Subjects: Atmospheric modeling; HEMTs; MODFETs; Sensitivity; Sensor phenomena and characterization; Venus; Wide band gap semiconductors

Further development of harsh environment electronics capable of uncooled operation under Venus surface atmospheric conditions (~460°C, ~92 bar, corrosive) would enable future missions to the surface of Venus to operate for up to a year. Wide band-gap gallium nitride (GaN) heterostructure devices are...