APA (7th ed.) Citation

Eisner, S. R., Alpert, H. S., Chapin, C. A., Yalamarthy, A. S., Satterthwaite, P. F., Nasiri, A., . . . Senesky, D. G. (2021, March 6). Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment. 2021 IEEE Aerospace Conference (50100), 1-12. https://doi.org/10.1109/AERO50100.2021.9438131

Chicago Style (17th ed.) Citation

Eisner, Savannah R., Hannah S. Alpert, Caitlin A. Chapin, Ananth Saran Yalamarthy, Peter F. Satterthwaite, Ardalan Nasiri, Sara Port, Simon Ang, and Debbie G. Senesky. "Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment." 2021 IEEE Aerospace Conference (50100) 6 Mar. 2021: 1-12. https://doi.org/10.1109/AERO50100.2021.9438131.

MLA (9th ed.) Citation

Eisner, Savannah R., et al. "Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment." 2021 IEEE Aerospace Conference (50100), 6 Mar. 2021, pp. 1-12, https://doi.org/10.1109/AERO50100.2021.9438131.