The Radiation Effect on the Parameters of Reference Voltage Sources and Charge-Sensitive Amplifiers of the Structured Array MH2XA010

Theeffect of 6 MeV fast electrons and {}^{60}{\mathbf{Co}} gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation...

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Bibliographic Details
Published in2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) pp. 1 - 5
Main Authors Dvornikov, Oleg V., Dziatlau, Valentine L., Prokopenko, Nikolay N., Tchekhovski, Vladimir A., Bugakova, Anna V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2018
Subjects
Capacitance
Charge-sensitive amplifier
Current measurement
fast electrons
gamma radiation
Junctions
Noise measurement
Radiation effects
radiation hardness
reference voltage source
Resistors
structured array
Transistors
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Summary:Theeffect of 6 MeV fast electrons and {}^{60}{\mathbf{Co}} gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation \mathbf{D}_{\mathbf{G}} = 2.04 Mrad and the electron fluence 3.0×10 14 el/cm 2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.
ISSN:1609-0438
DOI:10.1109/RADECS45761.2018.9328653