Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{\mathrm{C}^{-}}V_{\text{CE}} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench...

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Published in2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., Iwai, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 08.04.2021
Subjects
Current-voltage characteristics
Electric potential
IGBT
Insulated gate bipolar transistors
lifetime
Predictive models
Resistance
scaling
Silicon
Solid modeling
TCAD simulation
trench-gate
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Summary:Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{\mathrm{C}^{-}}V_{\text{CE}} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.
DOI:10.1109/EDTM50988.2021.9420922