Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector

• Published in: 2021 International Symposium on Devices, Circuits and Systems (ISDCS) pp. 1 - 4
• Main Authors: Wen, Jianhao, Wei, Jinxi, Song, Qi, Wang, Guanyu, Zhou, Chunyu, Wang, Wei
• Format: Conference Proceeding
• Language: English
• Published: IEEE 03.03.2021
• Subjects: frequency; Germanium; Heterojunction bipolar transistors; Johnson's limit; Performance evaluation; SiGe HBT; Silicon germanium; Simulation; Strain; Stress

A novel SiGe HBT architecture is designed by introducing the embedded Si 1−y Ge y stress raiser into the collector. In the proposed HBT structure, the emission region, the base region and the collector region are all subjected to stress, so as to enhance the characteristic frequency. The effect of e...