Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector - Wen, Jianhao; Wei, Jinxi; Song, Qi; Wang, Guanyu; Zhou, Chunyu; Wang, Wei (2021 International Symposium on Devices, Circuits and Systems (ISDCS), 2021)
Keywords: frequency; Germanium; Heterojunction bipolar transistors; Johnson's limit; Performance evaluation; SiGe HBT; Silicon germanium; Simulation; Strain; Stress