APA (7th ed.) Citation

Wen, J., Wei, J., Song, Q., Wang, G., Zhou, C., & Wang, W. (2021, March 3). Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector. 2021 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4. https://doi.org/10.1109/ISDCS52006.2021.9397921

Chicago Style (17th ed.) Citation

Wen, Jianhao, Jinxi Wei, Qi Song, Guanyu Wang, Chunyu Zhou, and Wei Wang. "Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector." 2021 International Symposium on Devices, Circuits and Systems (ISDCS) 3 Mar. 2021: 1-4. https://doi.org/10.1109/ISDCS52006.2021.9397921.

MLA (9th ed.) Citation

Wen, Jianhao, et al. "Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector." 2021 International Symposium on Devices, Circuits and Systems (ISDCS), 3 Mar. 2021, pp. 1-4, https://doi.org/10.1109/ISDCS52006.2021.9397921.