Photomixing THz Generation from Nitrogen-Ion-Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror

We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mi...

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Published in2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Chen, Genyu, Mikulics, Martin, Adam, Roman, Pericolo, Anthony, Serafini, John, Preble, Stefan, Cheng, J., Chimera, C., Komissarov, I., Hardtdegen, Hilde H., Sobolewski, Roman
Format Conference Proceeding
LanguageEnglish
Published IEEE 08.11.2020
Subjects
Gallium arsenide
Mirrors
Nitrogen
Optical device fabrication
Stimulated emission
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Summary:We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz46771.2020.9370390