Analysis of Transient HTRB Leakage in a SiC Field Ring Termination

• Published in: IEEE International Reliability Physics Symposium proceedings pp. 1 - 5
• Main Authors: Potera, R. R., Witt, T., Zheng, Y.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.04.2020
• Subjects: H3TRB; HTRB; Impact ionization; Leakage; Photonic band gap; Sensitivity; SiC; Silicon carbide; Silicon devices; Temperature sensors; termination; Transient; Transient analysis
• ISSN: 1938-1891
• DOI: 10.1109/IRPS45951.2020.9129571

SiC devices operate at 8x higher electric fields than Silicon devices, which subjects the passivation layers of SiC devices to these higher electric fields during voltage blocking states. We report a novel bimodal transient variation of reverse-biased leakage current at elevated temperature in a SiC...