Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment - Ruan, Dun-Bao; Chang-Liao, Kuei-Shu; Yi, Shih-Han; Yeh, Hsin-I; Liu, Guan-Ting (IEEE electron device letters, 2020)
Keywords: Current leakage; Equivalence; GeOₓ; Germanium; Germanium oxides; Hafnium; Hydrogen plasma; hydrogen plasma treatment; Leakage current; Logic gates; MOS devices; Oxidation; oxidation state; pGe MOS device; Plasmas; Substrates; Thickness; Valence; Zirconium