High current density InAsSb/GaSb tunnel field effect transistors

• Published in: 70th Annual Device Research Conference (DRC),2012-06-18 pp. 205 - 206
• Main Authors: Dey, A. W., Borg, B. M., Ganjipour, B., Ek, M., Dick, K. A., Lind, E., Nilsson, P., Thelander, C., Wernersson, Lars-Erik
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2012
• Subjects: Broken gap; Electrical Engineering, Electronic Engineering, Information Engineering; Elektroteknik och elektronik; Engineering and Technology; GaSb; InAs; Logic gates; Teknik; Tunneling Field-Effect Transistors
• DOI: 10.1109/DRC.2012.6257038
• ISBN: 1467311634; 9781467311632
• ISSN: 1548-3770

Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density (I ON,reverse = 17.5 mA/μm 2 ) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb nanowire TFETs, which exhibit record-high on-current levels.