Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure

Uniform thickness Al2O3 thin films have been deposited by eco-friendly mist CVD. The obtained Al2O3 film has an optical band gap value of more than 6.5 eV and a refractive index of 1.64 at 633 nm. The combination of capacitance–voltage (C–V) fitting method with non-linear least-squares algorithm, fr...

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Published inJapanese Journal of Applied Physics Vol. 63; no. 8; pp. 080905 - 80908
Main Authors Bito, Keigo, Ishiguro, Masaki, Radzuan, Hadirah A., Hiroshige, Hikaru, Motoyama, Tomohiro, Nakamura, Yusui, Asubar, Joel T., Yatabe, Zenji
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.08.2024
Japanese Journal of Applied Physics
Subjects
AlGaN/GaN
Algorithms
Aluminum gallium nitrides
Aluminum oxide
Chemical vapor deposition
HEMT
interface state density
mist-CVD
Refractivity
Thickness
Thin films
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Abstract Uniform thickness Al2O3 thin films have been deposited by eco-friendly mist CVD. The obtained Al2O3 film has an optical band gap value of more than 6.5 eV and a refractive index of 1.64 at 633 nm. The combination of capacitance–voltage (C–V) fitting method with non-linear least-squares algorithm, frequency dispersion, photo-assisted, and proposed reverse bias-assisted C–V methods revealed interface state densities ranging from 1 × 1012 to 3 × 1013 cm−2eV−1 along the mist-Al2O3/AlGaN interface. These values are comparable to those reported for atomic layer deposited Al2O3 thin films.
AbstractList Uniform thickness Al2O3 thin films have been deposited by eco-friendly mist CVD. The obtained Al2O3 film has an optical band gap value of more than 6.5 eV and a refractive index of 1.64 at 633 nm. The combination of capacitance–voltage (C–V) fitting method with non-linear least-squares algorithm, frequency dispersion, photo-assisted, and proposed reverse bias-assisted C–V methods revealed interface state densities ranging from 1 × 1012 to 3 × 1013 cm−2eV−1 along the mist-Al2O3/AlGaN interface. These values are comparable to those reported for atomic layer deposited Al2O3 thin films.
Author Motoyama, Tomohiro
Bito, Keigo
Ishiguro, Masaki
Nakamura, Yusui
Yatabe, Zenji
Asubar, Joel T.
Radzuan, Hadirah A.
Hiroshige, Hikaru
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Snippet Uniform thickness Al2O3 thin films have been deposited by eco-friendly mist CVD. The obtained Al2O3 film has an optical band gap value of more than 6.5 eV and...
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SubjectTerms AlGaN/GaN
Algorithms
Aluminum gallium nitrides
Aluminum oxide
Chemical vapor deposition
HEMT
interface state density
mist-CVD
Refractivity
Thickness
Thin films
Title Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure
URI https://iopscience.iop.org/article/10.35848/1347-4065/ad6abe
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Volume 63
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