Electronic Band-Engineering of a Dumbbell-shaped Graphene Nanoribbon by the Application of Uniaxial Tensile Strain

Graphene nanoribbons (GNRs) narrower than 70 nm are theoretically known to exhibit semiconductive properties, and thus, they were applied to photovoltaic devices with multi-band gap. A dumbbell-shape GNR (DSGNR) structure which consisted of a narrow semiconductive GNR and wide metallic GNRs at both...

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Bibliographic Details
Published in2021 International Conference on Electronics Packaging (ICEP) pp. 147 - 148
Main Authors Goundar, Jowesh Avisheik, Zhang, Qinqiang, Suzuki, Ken, Miura, Hideo
Format Conference Proceeding
LanguageEnglish
Published Japan Institute of Electronics Packaging 12.05.2021
Subjects
band-engineering
first principle DFT calculation
Graphene
graphene nanoribbon
Photonic band gap
photosensitivity
Photovoltaic systems
Schottky barriers
Silicon
Tensile strain
Uniaxial strain
uniaxial tensile strain
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Summary:Graphene nanoribbons (GNRs) narrower than 70 nm are theoretically known to exhibit semiconductive properties, and thus, they were applied to photovoltaic devices with multi-band gap. A dumbbell-shape GNR (DSGNR) structure which consisted of a narrow semiconductive GNR and wide metallic GNRs at both ends was found to show no Schottky barrier around the interface between those GNRs and its effective bandgap varied under the application of uniaxial tensile strain. The photovoltaic properties of the DSGNR structures were validated by the area-arrayed 40-nm wide DSGNR structure on a silicon substrate and the large piezoresistive effect, in other words, large change of bandgap was also validated by the DSGNR transferred on a soft PDMS substrate.
DOI:10.23919/ICEP51988.2021.9451931