Heavy ion radiation effects on TiN/HfO2/W resistive random access memory

• Published in: 2013 IEEE Aerospace Conference pp. 1 - 7
• Main Authors: He, Xiaoli, Geer, Robert E.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2013
• Subjects: Annealing; Hafnium compounds; Radiation effects; Resistance; Switches; Temperature measurement; Tin

Resistive random access memory (ReRAM) is an attractive candidate for application in next-generation nonvolatile memory (NVM) devices for both aerospace and conventional commercial applications. ReRAM has several intrinsic advantages over other NVM technologies due to its simple metal-insulator-meta...