Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

• Published in: IEEE electron device letters Vol. 38; no. 8; pp. 1019 - 1022
• Main Authors: Wei Wu, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian
• Format: Journal Article
• Language: English
• Published: IEEE 01.08.2017
• Subjects: Analog RRAM; Conductivity; Current measurement; Hafnium compounds; neuromorphic computing; Neuromorphics; Pulse measurements; Switches; synapse; Thermal conductivity

Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. Th...