APA (7th ed.) Citation

Wu, W., Wu, H., Gao, B., Deng, N., Yu, S., & Qian, H. (2017). Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer. IEEE electron device letters, 38(8), 1019-1022. https://doi.org/10.1109/LED.2017.2719161

Chicago Style (17th ed.) Citation

Wu, Wei, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, and He Qian. "Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer." IEEE Electron Device Letters 38, no. 8 (2017): 1019-1022. https://doi.org/10.1109/LED.2017.2719161.

MLA (9th ed.) Citation

Wu, Wei, et al. "Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer." IEEE Electron Device Letters, vol. 38, no. 8, 2017, pp. 1019-1022, https://doi.org/10.1109/LED.2017.2719161.