Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates

We report the temperature dependent thermal properties of two types of GaN composite substrates (GaN-SiC and GaN-Si) using picosecond time-domain thermoreflectance (TDTR). The intrinsic thermal conductivity of the GaN buffer film decreases with increasing temperature, while the GaN-substrate thermal...

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Bibliographic Details
Published in2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
Main Authors Jungwan Cho, Yiyang Li, Altman, D. H., Hoke, W. E., Asheghi, M., Goodson, K. E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2012
Subjects
Conductivity
Gallium nitride
Substrates
Temperature dependence
Temperature measurement
Thermal conductivity
Thermal resistance
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Summary:We report the temperature dependent thermal properties of two types of GaN composite substrates (GaN-SiC and GaN-Si) using picosecond time-domain thermoreflectance (TDTR). The intrinsic thermal conductivity of the GaN buffer film decreases with increasing temperature, while the GaN-substrate thermal interface resistance (TIR) increases with increasing temperature. The strong temperature dependence of the GaN-substrate TIR suggests that microstructural defects within the AlN transition film and near its boundaries can be particularly important.
ISBN:1467309281
9781467309288
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2012.6340094