Design of GaAs-based pseudomorphic HEMTs by 2D device simulations - Rahim, A.I.A.; Muhammad, N.F.I.; Sanusi, R.; Yahya, M.R. (ICSE 2004 : 2004 IEEE International Conference on Semiconductor Electronics : proceedings : December 7-9, 2004, Kuala Lumbur, Malaysia, 2004)
Keywords: Capacitance; Character generation; Cost function; Cutoff frequency; Doping; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs