Realization of the First GaN Based Tunnel Field-Effect Transistor

• Published in: 2018 76th Device Research Conference (DRC) pp. 1 - 3
• Main Authors: Chaney, Alexander, Turski, Henryk, Nomoto, Kazuki, Wang, Qingxiao, Hu, Zongyang, Kim, Moon, Xing, Huili Grace, Jena, Debdeep
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2018
• Subjects: Current measurement; Gallium nitride; Metals; Semiconductor device measurement; Temperature measurement; TFETs; Tunneling

Tunnel field-effect transistors (TFETs) offer the means to surpass the subthreshold swing (SS) limit of 60 mV/dec that limits MOSFETs. While MOSFETs rely on modulating a potential barrier, which is subject to a Boltzmann tail in the density of states (DOS), interband tunneling in TFETs enables a sha...