GaN HEMTs power module package design and performance evaluation

This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Sixteen GaN chips are mounted on one AlN substrate. There are three AlN substrate in one module. Each device is wire-bonded in parallel conne...

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Bibliographic Details
Published in2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 297 - 299
Main Authors Chung-Hsiang Ho, Po-Chien Chou, Cheng, Stone
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2013
Subjects
Aluminum gallium nitride
Gallium nitride
HEMTs
Logic gates
MODFETs
Performance evaluation
Resistance
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Summary:This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Sixteen GaN chips are mounted on one AlN substrate. There are three AlN substrate in one module. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured for different connection and sizes of devices, at various of power densities, pulse lengths, and duty factors. We found some conditions that makes the parallel connection difference down to zero. According that, The GaN has maxima drain current=5.98A(98.8%).
ISBN:9781467351348
1467351342
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2013.6694468