Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators

This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising since they enable greater electromechanical coupling (k t 2 ) than undoped AlN films (∼ 2X for 20% doping),...

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Published in2018 IEEE Micro Electro Mechanical Systems (MEMS) pp. 787 - 790
Main Authors Schaffer, Zachary A., Colombo, Luca, Kochhar, Abhay S., Piazza, Gianluca, Mishin, Sergey, Oshmyansky, Yury
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2018
Subjects
Aluminum nitride
Damping
Electrodes
Geometry
III-V semiconductor materials
Resonators
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Summary:This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising since they enable greater electromechanical coupling (k t 2 ) than undoped AlN films (∼ 2X for 20% doping), but have generally exhibited lower quality factors (Qs) [1,2]. This work is the first to study what damping factors impact the performance of these devices and provide preliminary design guidelines to attain high Qs. Different ScAlN LVR geometries are analyzed and devices tested in air, under vacuum, and at cryogenic temperatures (11 K). Anchor losses and thermoelastic damping (TED) are evaluated and compared to AlN LVRs. Similarities in thermal scaling of Qs in ScAlN resonators indicate that the source of TED is similar to AlN devices.
ISSN:2160-1968
DOI:10.1109/MEMSYS.2018.8346673