Temperature dependence of peak drift velocity and threshold field in n-In0.53Ga0.47As

The peak drift velocity (v p ) and the threshold field (E t ) for negative differential mobility in In 0.53 Ga 0.47 As are calculated in the temperature range of 125-400 K using the Monte Carlo technique. With an increase of temperature, E t increases but v p decreases for a pure as well as for an i...

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Published inIEEE transactions on electron devices Vol. 31; no. 12; pp. 1918 - 1919
Main Authors Bhattacharyya, A., Ghosal, A., Chattopadhyay, D.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1984
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Abstract The peak drift velocity (v p ) and the threshold field (E t ) for negative differential mobility in In 0.53 Ga 0.47 As are calculated in the temperature range of 125-400 K using the Monte Carlo technique. With an increase of temperature, E t increases but v p decreases for a pure as well as for an impure material. E t is smaller and v p is larger than the corresponding quantities in GaAs.
AbstractList The peak drift velocity (v p ) and the threshold field (E t ) for negative differential mobility in In 0.53 Ga 0.47 As are calculated in the temperature range of 125-400 K using the Monte Carlo technique. With an increase of temperature, E t increases but v p decreases for a pure as well as for an impure material. E t is smaller and v p is larger than the corresponding quantities in GaAs.
Author Ghosal, A.
Bhattacharyya, A.
Chattopadhyay, D.
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Snippet The peak drift velocity (v p ) and the threshold field (E t ) for negative differential mobility in In 0.53 Ga 0.47 As are calculated in the temperature range...
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Title Temperature dependence of peak drift velocity and threshold field in n-In0.53Ga0.47As
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