Design and Performance Analysis of Perovskite Solar Cell

Searching for solar-absorbing materials comprising earth-abundant materials with chemical stability is of the critical importance of evolving photovoltaic technologies. The Mott-Hubbard type transition-metal oxides (TMOs) generally contain only earth-abundant elements and intrinsically have long-ter...

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 69 - 70
Main Authors Kumar, Ayush, Pandey, Saurabh kumar
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Buffer layers
II-VI semiconductor materials
Indium tin oxide
Insulators
Mott Insulator (MI)
Perovskite
Photonic band gap
Photovoltaic cells
Transition metal oxides (TMOs)
Zinc oxide
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Summary:Searching for solar-absorbing materials comprising earth-abundant materials with chemical stability is of the critical importance of evolving photovoltaic technologies. The Mott-Hubbard type transition-metal oxides (TMOs) generally contain only earth-abundant elements and intrinsically have long-term chemical stability, which is ideal for constructing low-cost and resilient photovoltaic devices. In this study, different aspects of constituent layer parameters thickness, defect density buffer layers has been considered to identify the device performance of perovskite solar cell. An efficiency of 21.67% (with Voc of 0.93 V, Jsc of 26.65 mA/cm2 and fill factor of 0.87) has been achieved with TiO 2 based buffer layer.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570235