A Sequential Write Scheme for Phase Change Memory Based Serial Interface EEPROM

• Published in: 2019 China Semiconductor Technology International Conference (CSTIC) pp. 1 - 3
• Main Authors: Wu, Jui-Jen, Jien, Fan-Yi, Huang, Sheng-Tsai, Zheng, Junhua, Xu, Peter, Liao, Mingliang, Gao, Frank, Nie, Siyu, Xiao, Chuancong, Zhang, Gangpeng, Tsou, Eric
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2019
• Subjects: EEPROM; PCM; Phase Change Memory; Write Driving

A 1Mb Serial EEPROM compatible non-volatile memory (NVM) with phase change memory (PCM) device has been developed in 40nm CMOS technology. The storage element PCM device was integrated and fabricated by AMS Fab (Jiangsu Advanced Memory Semiconductor Corp., AMS) with additional masks added to the bas...