Surface roughness contribution to MHEMT mobility characteristics

• Published in: 2008 IEEE International Conference on Semiconductor Electronics pp. 505 - 508
• Main Authors: Ahmad, S., Soetedjo, H., Sabtu, I., Yahya, M.R., bin Dolah, A., Rahim, A.I.A., Mat, A.F.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2008
• Subjects: Atomic force microscopy; Atomic measurements; Electron microscopy; HEMTs; mHEMTs; MODFETs; Rough surfaces; Surface resistance; Surface roughness; Temperature

Characterizations on the surface roughness of metamorphic high electron mobility transistor structure (MHEMT) denoted as 2211_#1 (step-graded metamorphic buffer) and 2212_#1 (linearly-graded metamorphic buffer) have been carried out using Atomic Force Microscopy (AFM). Surface roughness effect of li...