Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology

• Published in: 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
• Main Authors: Merkle, Thomas, Leuther, Arnulf, Koch, Stefan, Kallfass, Ingmar, Tessmann, Axel, Wagner, Sandrine, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2014
• Subjects: Coplanar waveguides; Gain; Indium phosphide; mHEMTs; Microstrip; MMICs; Transmission line measurements

High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility t...