Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology

• Published in: 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
• Main Authors: Merkle, Thomas, Leuther, Arnulf, Koch, Stefan, Kallfass, Ingmar, Tessmann, Axel, Wagner, Sandrine, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2014
• Subjects: Coplanar waveguides; Gain; Indium phosphide; mHEMTs; Microstrip; MMICs; Transmission line measurements
• ISSN: 1550-8781; 2374-8443
• DOI: 10.1109/CSICS.2014.6978544

High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors are encapsulated by 0.3 μm and 1.4 μm thick layers of benzocyclobutene (BCB). The 1.4 μm thick BCB layer is used to form shielded thin-film microstrip (TFMS) lines confined at the front-side of the wafer for implementing matching networks. Substrate thinning and backside processing is not required for the function of the amplifiers. The amplifier for WR-6 operates over the whole waveguide band with an average gain of 28 dB. A gain of more than 24 dB was measured for the MMIC from 215 - 290 GHz. All presented MMICs exceed 30% of gain defined bandwidth.