A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput - Lee, Seungjae; Kim, Chulbum; Kim, Minsu; Joe, Sung-min; Jang, Joonsuc; Kim, Seungbum; Lee, Kangbin; Kim, Jisu; Park, Jiyoon; Lee, Han-Jun; Kim, Minseok; Lee, Seonyong; et al. (Digest of technical papers - IEEE International Solid-State Circuits Conference, 2018)
Keywords: Bit error rate; Computer architecture; Degradation; Flash memories; Programming; Sensors; Three-dimensional displays