Statistical Analysis of Flash Memory Read Data

This paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and variations of the read values with respect to the intended write values. The analysis reveals how the neighboring cells interfere with the v...

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Published in2011 IEEE Global Telecommunications Conference - GLOBECOM 2011 pp. 1 - 6
Main Authors Jaekyun Moon, Jaehyeong No, Sangchul Lee, Sangsik Kim, Joongseop Yang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Ash
Erbium
IEEE Communications Society
Interference
Noise
Random access memory
Training
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Abstract This paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and variations of the read values with respect to the intended write values. The analysis reveals how the neighboring cells interfere with the victim cell. Using the proposed analysis technique, the contribution of a specified set of neighboring cells towards the random read variation of the victim cell can be also quantified accurately.
AbstractList This paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and variations of the read values with respect to the intended write values. The analysis reveals how the neighboring cells interfere with the victim cell. Using the proposed analysis technique, the contribution of a specified set of neighboring cells towards the random read variation of the victim cell can be also quantified accurately.
Author Sangsik Kim
Sangchul Lee
Joongseop Yang
Jaehyeong No
Jaekyun Moon
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  surname: Jaekyun Moon
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  surname: Jaehyeong No
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  surname: Sangchul Lee
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  surname: Sangsik Kim
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  organization: Dept. of Flash Solution Dev., Hynix Semicond., Icheon, South Korea
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  surname: Joongseop Yang
  fullname: Joongseop Yang
  email: joongseob.yang@hynix.com
  organization: Dept. of Flash Solution Dev., Hynix Semicond., Icheon, South Korea
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Snippet This paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and...
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SubjectTerms Ash
Erbium
IEEE Communications Society
Interference
Noise
Random access memory
Training
Title Statistical Analysis of Flash Memory Read Data
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