Effect of the MOSFET choice on conducted EMI in power converter circuits

The phase of virtual prototyping, which is usually based on a whole of numerical simulations of the system, requires today to have thin suitable models. These models must take in account the real behavior of the systems under various physical constraints (thermal, electromagnetic...). Particularly,...

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Bibliographic Details
Published in2012 16th IEEE Mediterranean Electrotechnical Conference pp. 610 - 613
Main Authors Ben Hadj Slama, J., Tlig, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2012
Subjects
Electromagnetic compatibility
Electromagnetic interference
Electromagnetics
EMC
Integrated circuit modeling
Interferences
LSIN
Mosfet
MOSFET circuits
Transistors
Voltage measurement
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ISBN9781467307826
1467307823
ISSN2158-8473
DOI10.1109/MELCON.2012.6196505

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Summary:The phase of virtual prototyping, which is usually based on a whole of numerical simulations of the system, requires today to have thin suitable models. These models must take in account the real behavior of the systems under various physical constraints (thermal, electromagnetic...). Particularly, in this work, we are interested to the study of the effect of the Mosfet transistor choice on the conducted electromagnetic interferences emitted by static converters circuits. The objective of this work is to propose a new design methodology which will permit to assist the power electronics circuit designer in the choice of the active components with the purpose of reducing the electromagnetic disturbances.
ISBN:9781467307826
1467307823
ISSN:2158-8473
DOI:10.1109/MELCON.2012.6196505