Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-Doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application

• Published in: 2019 IEEE 11th International Memory Workshop (IMW) pp. 1 - 4
• Main Authors: Hennen, T., Bedau, D., Rupp, J. A. J., Funck, C., Menzel, S., Grobis, M., Waser, R., Wouters, D. J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2019
• Subjects: Mott; Neuromorphic Computing; Oscillators; Oscillatory Device; Resistance; Resistive Switching; Selector; Switches; Temperature; Temperature dependence; Temperature measurement; Threshold Switching; Trajectory
• DOI: 10.1109/IMW.2019.8739556

The switching speed of a threshold switching Cr-doped V 2 O 3 device as function of voltage and resistive load is understood by means of a thermal device model. It is found that conditions that result in switching trajectories traveling further from equilibrium result in reduced switching time and energy, providing interesting guidelines for the optimization of the 1S1R memory cell. Secondly, the addition of capacitive loads is investigated. Voltage-controlled oscillatory behavior in the frequency range of 10-30 MHz has been obtained and also properly simulated by our device model. Such nanodevice oscillators are of high interest for new neuromorphic computing paradigms.