Optimal SiGe:C HBT module for BiCMOS applications

In this article, the effect of carbon doping in the SiGe layer with optimal base profile to achieve a high performance of SiGe:C HBT was evaluated. This SiGe:C module possesses a higher thermal stability during HBT processing, which is suitably integrated with a gate-after-base BiCMOS technology.

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Bibliographic Details
Published in2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672) pp. 113 - 116
Main Authors Lai, L.S., Liang, C.S., Chen, P.S., Hsu, Y.M., Liu, Y.H., Tseng, Y.T., Lu, S.C., Tsai, M.-J., Liu, C.W., Rosenblad, C., Buschbaum, T., Buschbeck, M., Ramm, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Annealing
BiCMOS integrated circuits
Boron alloys
Capacitive sensors
Doping
Germanium silicon alloys
Heterojunction bipolar transistors
Silicon germanium
Technology forecasting
Thermal stability
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Summary:In this article, the effect of carbon doping in the SiGe layer with optimal base profile to achieve a high performance of SiGe:C HBT was evaluated. This SiGe:C module possesses a higher thermal stability during HBT processing, which is suitably integrated with a gate-after-base BiCMOS technology.
ISBN:0780377656
9780780377653
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2003.1252565