A novel divided STI-based nLDMOSFET for suppressing HCI degradation under high gate bias stress

• Published in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 299 - 302
• Main Authors: Mori, Takahiro, Kubo, Shunji, Ipposhi, Takashi
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2018
• Subjects: Buffer layers; Degradation; Electric fields; Human computer interaction; Impact ionization; Logic gates; Stress

Incorporating a P-type REduced SURface Field (RESURF) layer under an N-type drift region in an nLDMOSFET is a well-known means of improving the trade-off between the on-resistance (Rsp) and off-state breakdown voltage (BVoff), as well as reducing hot carrier injection (HCI) degradation. However, the...