Space Program Scheme for 3-D NAND Flash Memory Specialized for the TLC Design

A new space program (PGM) scheme is proposed to achieve reliable triple-level-cell (TLC) 3-D NAND flash memory. Considering the lateral diffusion issue of stored electrons in the nitride storage layer, the proposed scheme stores electrons in the nitride layer of the space region between adjacent cel...

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Bibliographic Details
Published in2018 IEEE Symposium on VLSI Technology pp. 201 - 202
Main Authors Kang, Ho-Jung, Choi, Nagyong, Lee, Dong Hwan, Lee, Tackhwi, Chung, Sungyong, Bae, Jong-Ho, Park, Byung-Gook, Lee, Jong-Ho
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Aerospace electronics
Electron traps
Erbium
Flash memories
Logic gates
Timing
Very large scale integration
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ISSN2158-9682
DOI10.1109/VLSIT.2018.8510660

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Summary:A new space program (PGM) scheme is proposed to achieve reliable triple-level-cell (TLC) 3-D NAND flash memory. Considering the lateral diffusion issue of stored electrons in the nitride storage layer, the proposed scheme stores electrons in the nitride layer of the space region between adjacent cells to suppress the lateral movement of trapped electrons in the programmed target cells. The effect of the space PGM can be sustained until 10 4 s at 90 °C and up to 1k read cycles at 25 °C. The programmed space region of the nitride layer improves the retention characteristics of the cells in the PGM state by 40% and remarkably reduces the V th redistribution.
ISSN:2158-9682
DOI:10.1109/VLSIT.2018.8510660