InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance

We demonstrate scaled InGaAs-on-insulator FinFETs and planar MOSFETs on Si substrate for low power logic and RF applications. This Si-CMOS compatible technology implements SiN x source-drain spacers and doped extensions for reduced overlap capacitances. FinFETs with performance for logic application...

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Bibliographic Details
Published in2018 IEEE Symposium on VLSI Technology pp. 165 - 166
Main Authors Zota, C. B., Convertino, C., Deshpande, V., Merkle, T., Sousa, M., Caimi, D., Czomomaz, L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
FinFETs
Logic gates
Metals
Performance evaluation
Radio frequency
Silicon
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ISSN2158-9682
DOI10.1109/VLSIT.2018.8510631

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Summary:We demonstrate scaled InGaAs-on-insulator FinFETs and planar MOSFETs on Si substrate for low power logic and RF applications. This Si-CMOS compatible technology implements SiN x source-drain spacers and doped extensions for reduced overlap capacitances. FinFETs with performance for logic applications matching state-of-the-art are demonstrated. Simultaneously, f t and f max of 400 and 100 GHz are achieved respectively, the highest reported f t for a III-V MOSFET on Si. Finally, we explore the use of an extended gate line to reduce gate resistance, offering balanced f t /f max of 215/300 GHz, the first report of III-V RF devices on Si matching state of the art Si-CMOS.
ISSN:2158-9682
DOI:10.1109/VLSIT.2018.8510631