Integrated heat sinks for SOI power devices
Silicon on insulator (SOI) technology for power devices offers many distinct advantages compared to bulk Si technology, however in high power applications the buried oxide (BOX) layer can impede heat transport towards the backside of the silicon substrate. This paper demonstrates integration of heat...
Saved in:
Published in | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 285 - 288 |
---|---|
Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2013
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!