Integrated heat sinks for SOI power devices

Silicon on insulator (SOI) technology for power devices offers many distinct advantages compared to bulk Si technology, however in high power applications the buried oxide (BOX) layer can impede heat transport towards the backside of the silicon substrate. This paper demonstrates integration of heat...

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Bibliographic Details
Published in2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 285 - 288
Main Authors Liang Yan, Koops, Gerhard, Steeneken, Peter, Heringa, Anco, Surdeanu, Radu, van Dijk, Luc
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2013
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