BSIM3v3 key parameter extractions for efficient circuit designs

• Published in: 2000 IEEE International Conference on Semiconductor Electronics Proceedings pp. 99 - 103
• Main Authors: Ngarmnil, J., Sangnak, W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2000
• Subjects: Circuit simulation; Circuit synthesis; Circuit testing; CMOS technology; MOS devices; MOSFET circuits; Parameter extraction; Performance analysis; Semiconductor device modeling; Threshold voltage

At present, most CMOS technologies are based on the use of BSIM3v3 MOSFET model, which has been intensively developed to meet the requirements for optimum accuracy. This results in a very accurate and complex MOSFET model, which affects designers, especially when performing hand calculations during...