BSIM3v3 key parameter extractions for efficient circuit designs

At present, most CMOS technologies are based on the use of BSIM3v3 MOSFET model, which has been intensively developed to meet the requirements for optimum accuracy. This results in a very accurate and complex MOSFET model, which affects designers, especially when performing hand calculations during...

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Bibliographic Details
Published in2000 IEEE International Conference on Semiconductor Electronics Proceedings pp. 99 - 103
Main Authors Ngarmnil, J., Sangnak, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Circuit simulation
Circuit synthesis
Circuit testing
CMOS technology
MOS devices
MOSFET circuits
Parameter extraction
Performance analysis
Semiconductor device modeling
Threshold voltage
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Summary:At present, most CMOS technologies are based on the use of BSIM3v3 MOSFET model, which has been intensively developed to meet the requirements for optimum accuracy. This results in a very accurate and complex MOSFET model, which affects designers, especially when performing hand calculations during the analysis and synthesis process. This paper presents an essential concept of BSIM3v3 key parameter extraction for efficient CMOS circuit design. Key parameter extractions from various CMOS SPICE parameter files are presented. Design examples on HSPICE are given to demonstrate the performance of the methodology.
ISBN:9780780364301
0780364309
DOI:10.1109/SMELEC.2000.932442