Future DRAM development and prospects for ferroelectric memories

• Published in: Proceedings of 1994 IEEE International Electron Devices Meeting pp. 7 - 16
• Main Author: Tarui, Y.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1994
• Subjects: Bismuth; Capacitance; Costs; Dielectric materials; Ferroelectric materials; Large scale integration; Nonvolatile memory; Polarization; Random access memory; Very large scale integration

DRAMs took full advantage of the technical and economical merits of LSI, resulting in cost benefits expressed by "The /spl pi/ rule". In the VLSI era, however, difficulties have arisen with respect to storage capacitance. As a result, cost advantages have been reduced to the level expresse...