The new IGBT generation a great improvement potential for motor drive systems

A new IGBT module generation with a so called field stop IGBT in combination with a new freewheeling diode, based on the same principle of a vertical shrink by means of ultrathin wafer technology, is discussed. The results are very robust devices with almost ideal carrier concentrations for minimum...

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Bibliographic Details
Published inConference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129) Vol. 5; pp. 2885 - 2889 vol.5
Main Authors Laska, T., Lorenz, L., Mauder, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Automatic control
Control systems
Frequency
Insulated gate bipolar transistors
Motor drives
Power electronics
Semiconductor diodes
Switches
Switching loss
Voltage
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Summary:A new IGBT module generation with a so called field stop IGBT in combination with a new freewheeling diode, based on the same principle of a vertical shrink by means of ultrathin wafer technology, is discussed. The results are very robust devices with almost ideal carrier concentrations for minimum on state voltages and switching losses.
ISBN:9780780364011
0780364015
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.2000.882575