Minority carrier lifetime of GaAs on silicon

• Published in: Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference pp. 684 - 688 vol.1
• Main Authors: Ahrenkiel, R.K., Al-Jassim, M.M., Dunlavy, D.J., Jones, K.M., Vernon, S.M., Tobin, S.P., Haven, V.E.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1988
• Subjects: Buffer layers; Charge carrier lifetime; Chemical vapor deposition; Gallium arsenide; Photoluminescence; Photovoltaic cells; Silicon; Spontaneous emission; Testing; Transmission electron microscopy

AlGaAs/GaAs double heterostructures for solar cells were grown on heteroepitaxial GaAs/Si layers by metal-organic chemical vapor deposition. These test devices were subsequently characterized by photoluminescence and transmission electron microscopy. The minority carrier lifetimes were found to be l...