Unipolar resistive switching and tunneling oscillations in isolated Si-SiOx core-shell nanostructure

Unipolar resistive switching (URS) is observed in isolated Si-SiOx core-shell nanostructures. I-V characteristics recorded by a conductive atomic force microscope tip show SET and RESET processes with self compliance behavior. Hopping of carriers through defect states in the high resistance state (H...

Full description

Saved in:
Bibliographic Details
Published inNanotechnology Vol. 27; no. 45
Main Authors Ghanta, Ujjwal, Ray, Mallar, Bandyopadhyay, Nil Ratan, Hossain, Syed Minhaz
Format Journal Article
LanguageEnglish
Published IOP Publishing 11.11.2016
Subjects
charge transport
nanocrystals
resistive switching
silicon
Online AccessGet full text

Cover

More Information
Summary:Unipolar resistive switching (URS) is observed in isolated Si-SiOx core-shell nanostructures. I-V characteristics recorded by a conductive atomic force microscope tip show SET and RESET processes with self compliance behavior. Hopping of carriers through defect states in the high resistance state (HRS) and space charge limited conduction in the low resistance state (LRS) are found to be the dominant carrier transport mechanisms in Si-SiOx core-shell nanostructures. URS between LRS and HRS may be attributed to the transition between hydrogen bridge (Si-H-Si) and hydrogen doublet (Si-HH-Si) defects. During RESET process, charge carriers tunnel through the nanostructure giving rise to oscillatory conduction.
Bibliography:NANO-110542.R2
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/27/45/455702