Analysis of in-well pumping of semiconductor lasers by microscopic gain calculations

In this contribution we are analyzing the properties of a gain structure based on seventeen 10 nm wide Al-GalnAs QW designed for operation in the 850 nm range. Optically pumped semiconductor lasers are usually pumped via barrier states from which the generated carriers are relaxing into the quantum...

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Published inCLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference p. 1
Main Authors Buckers, C., Baumner, A., Thranhardt, A., Hader, J., Moloney, J.V., Koch, S.W., Wei Zhang, Ackemann, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2009
Subjects
Absorption
Laser excitation
Laser theory
Microscopy
Optical pumping
Physics
Pump lasers
Semiconductor lasers
Surface emitting lasers
Vertical cavity surface emitting lasers
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Summary:In this contribution we are analyzing the properties of a gain structure based on seventeen 10 nm wide Al-GalnAs QW designed for operation in the 850 nm range. Optically pumped semiconductor lasers are usually pumped via barrier states from which the generated carriers are relaxing into the quantum well (QW) states. Pumping directly in-well states seems to be an attractive alternative in some situations because it increases the spectrum of pump diodes suitable for a given emission wavelength.
ISBN:1424440793
9781424440795
DOI:10.1109/CLEOE-EQEC.2009.5192288