Recent advances in all-epitaxial growth and properties of orientation-patterned gallium arsenide (OP-GaAs)

We report on all-epitaxial growth of large diameter (3-inch), large aperture (>1.5 mm thick), low-loss (<0.005 cm -1 ) QPM GaAs. 2-mum-laser-pumped OPO performance was comparable to that of ZnGeP 2 .

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Bibliographic Details
Published in2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2
Main Authors Schunemann, P.G., Pomeranz, L.A., Young, Y.E., Mohnkern, L., Vera, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
(190.2620) Frequency Conversion
(190.4400) Nonlinear Optics
Conducting materials
Crystalline materials
Epitaxial growth
Frequency conversion
Gallium arsenide
materials
Molecular beam epitaxial growth
Nonlinear optics
Optical materials
Optical pumping
Thermal conductivity
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Summary:We report on all-epitaxial growth of large diameter (3-inch), large aperture (>1.5 mm thick), low-loss (<0.005 cm -1 ) QPM GaAs. 2-mum-laser-pumped OPO performance was comparable to that of ZnGeP 2 .
ISSN:2160-9004
DOI:10.1364/CLEO.2009.CWJ5