A New Programming Disturbance Phenomenon in NAND Flash Memory By Source/Drain Hot-Electrons Generated By GIDL Current

A new programming disturbance phenomenon in the NAND flash cell operation is introduced, which we have modeled and named as "source/drain hot-carrier injection disturbance" (abbr. "hot-carrier disturbance"). The source/drain hot electrons are supplied from gate-induced drain leak...

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Published in2006 21st IEEE Non-Volatile Semiconductor Memory Workshop pp. 31 - 33
Main Authors Jae-Duk Lee, Chi-Kyung Lee, Myung-Won Lee, Han-Soo Kim, Kyu-Charn Park, Won-Seong Lee
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 2006
Subjects
Acceleration
Electrons
Hot carrier injection
Hot carriers
Leakage current
Low voltage
Monitoring
Tunneling
Writing
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Abstract A new programming disturbance phenomenon in the NAND flash cell operation is introduced, which we have modeled and named as "source/drain hot-carrier injection disturbance" (abbr. "hot-carrier disturbance"). The source/drain hot electrons are supplied from gate-induced drain leakage current at the GSL (ground-select line) transistor gate edge and are accelerated in the source/drain region of GSL-WLO (word line 0) cell, then are injected to the WLO cell. The simulation results show that the space of GSL-WLO cell should be kept over 110 nm to suppress the hot-carrier disturbance, which is also verified by experiment
AbstractList A new programming disturbance phenomenon in the NAND flash cell operation is introduced, which we have modeled and named as "source/drain hot-carrier injection disturbance" (abbr. "hot-carrier disturbance"). The source/drain hot electrons are supplied from gate-induced drain leakage current at the GSL (ground-select line) transistor gate edge and are accelerated in the source/drain region of GSL-WLO (word line 0) cell, then are injected to the WLO cell. The simulation results show that the space of GSL-WLO cell should be kept over 110 nm to suppress the hot-carrier disturbance, which is also verified by experiment
Author Myung-Won Lee
Kyu-Charn Park
Jae-Duk Lee
Chi-Kyung Lee
Won-Seong Lee
Han-Soo Kim
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  organization: Memory Bus., Samsung Electron. Co. Ltd., Gyungki-Do
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  surname: Won-Seong Lee
  fullname: Won-Seong Lee
  organization: Memory Bus., Samsung Electron. Co. Ltd., Gyungki-Do
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Snippet A new programming disturbance phenomenon in the NAND flash cell operation is introduced, which we have modeled and named as "source/drain hot-carrier injection...
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StartPage 31
SubjectTerms Acceleration
Electrons
Hot carrier injection
Hot carriers
Leakage current
Low voltage
Monitoring
Tunneling
Writing
Title A New Programming Disturbance Phenomenon in NAND Flash Memory By Source/Drain Hot-Electrons Generated By GIDL Current
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