Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlOxNy gate insulator

• Published in: Semiconductor science and technology Vol. 34; no. 5
• Main Authors: Kang, Myoung-Jin, Eom, Su-Keun, Kim, Hyun-Seop, Lee, Cheol-Hee, Cha, Ho-Young, Seo, Kwang-Seok
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.05.2019
• Subjects: AlGaN/GaN MOS-HFETs; aluminum oxynitride; normally-off; plasma enhanced atomic layer deposition; threshold voltage stability

We developed a high-quality plasma enhanced atomic layer deposited (PEALD) aluminum oxynitride (AlOxNy) process for the metal-oxide-semiconductor (MOS) gate insulator of fully-recessed-gate AlGaN/GaN-on-Si MOS-heterojunction field-effect transistors (MOS-HFETs). It was found that the cyclic nitrogen...