Germanium nanoantennas for plasmon-enhanced third harmonic generation in the mid infrared

Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium with effective plasma frequencies above 60 THz, corresponding to wavelengths below 5 μm. This technology paves the way for mid-infrared nanoplasmonics with application in integrated telecommunication sys...

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Published in2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) p. 1
Main Authors Fischer, Marco P., Riede, Aaron, Grupp, Alexander, Gallacher, Kevin, Frigerio, Jacopo, Pellegrini, Giovanni, Ortolani, Michele, Paul, Douglas J., Isella, Giovanni, Leitenstorfer, Alfred, Biagioni, Paolo, Brida, Daniele
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2017
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Summary:Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium with effective plasma frequencies above 60 THz, corresponding to wavelengths below 5 μm. This technology paves the way for mid-infrared nanoplasmonics with application in integrated telecommunication systems and enhanced molecular sensing in the so-called vibrational fingerprint spectral region [1]. In this work, we demonstrate that Ge antenna structures are also suitable for nonlinear optical processes such as third harmonic generation (THG) in the mid infrared [2], owing to the strong resonant enhancement. Subwavelength-confined light emitters are of high interest for experiments targeting single molecules or other isolated quantum systems [3].
DOI:10.1109/CLEOE-EQEC.2017.8087670