Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET

This work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for h...

Full description

Saved in:
Bibliographic Details
Published in2022 36th Symposium on Microelectronics Technology (SBMICRO) pp. 1 - 4
Main Authors Carvalho, Henrique L., Rangel, Ricardo C., Sasaki, Katia R. A., Agopian, Paula G. D., Yojo, Leonardo S., Martino, Joao A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 22.08.2022
Subjects
Aluminum
BE SOI MOSFET
Logic gates
MOSFET
Programming
reconfigurable device
Schottky barriers
Schottky contact
Sintering
source and drain contacts
Voltage
Online AccessGet full text

Cover

More Information
Summary:This work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET.
DOI:10.1109/SBMICRO55822.2022.9880960