Comparative study of low-temperature PECVD Of amorphous silicon using mono-, di-, trisilane and cyclohexasilane - Pokhodnya, K.; Sandstrom, J.; Olson, C.; Xuliang Dai; Boudjouk, P.R.; Schulz, D.L. (2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009)
Keywords: Amorphous silicon; Argon; Chemical vapor deposition; Hydrogen; Plasma chemistry; Plasma temperature; Raman scattering; Semiconductor films; Substrates; Temperature distribution